A method of forming an SRAM cell includes, a) providing a pair of pull-down gates having associated transistor diffusiion regions operatively adjacent thereto, one of the diffusion regions of each pull-down gate being electrically connected to the other pull-down gate; b) providing a pair of pull-up...http://www.google.es/patents/US5998276?utm_source=gb-gplus-sharePatente US5998276 - Methods of making a SRAM cell employing substantially vertically elongated pull-up resistors and methods of making resistor constructions
Methods of making a SRAM cell employing substantially vertically elongated ...
