A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset in a range of approximately 5.16 eV to 7.8 eV. Gate oxides formed from elements...http://www.google.es/patents/US7259434?utm_source=gb-gplus-sharePatente US7259434 - Highly reliable amorphous high-k gate oxide ZrO2
