A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate,...http://www.google.es/patents/US20090236698?utm_source=gb-gplus-sharePatente US20090236698 - METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
