A non-volatile memory device has a channel region between source/drain regions, a floating gate, a control gate, a first dielectric region between the channel region and the floating gate, and a second dielectric region between the floating gate and the control gate. The first dielectric region includes...http://www.google.es/patents/US7154779?utm_source=gb-gplus-sharePatente US7154779 - Non-volatile memory cell using high-k material inter-gate programming
Non-volatile memory cell using high-k material inter-gate programming
