A non-volatile random access memory (NVRAM) cell that utilizes a simple, single-transistor DRAM cell configuration. The present NVRAM employs an enhancement mode nMOS transistor made as an accumulation mode transistor. The transistor has an n-type silicon carbide channel layer on a p-type silicon carbide...http://www.google.es/patents/US5510630?utm_source=gb-gplus-sharePatente US5510630 - Non-volatile random access memory cell constructed of silicon carbide
Non-volatile random access memory cell constructed of silicon carbide
