Interconnect dual damascene structure are fabricated by depositing on a layer of at least one dielectric, a mask forming layer for providing the via-level mask layer of the dual damascene structures; creating an elongated via pattern in the via-level mask layer; depositing a layer of line-level dielectric...http://www.google.es/patents/US7439628?utm_source=gb-gplus-sharePatente US7439628 - Method for improved process latitude by elongated via integration
Method for improved process latitude by elongated via integration
