A method of fabricating a trench capacitor of a memory cell, includes providing a semiconductor substrate with a surface covered by a pad layer, forming a trench in the substrate, forming a first layer on the pad layer and on the surface of the trench, removing a portion of the first layer to form a...http://www.google.es/patents/US20050093048?utm_source=gb-gplus-sharePatente US20050093048 - Deep trench capacitor having increased surface area
Deep trench capacitor having increased surface area
Número de solicitud: 10/697,649 Número de publicación: US 2005/0093048 A1 Fecha de presentación: 31 Oct 2003 Patente emitida: US6955962 ( Fecha de emisión 18 Oct 2005)
