An antifuse structure particularly suitable for field programmable gate arrays is presented. In most present day processes the antifuse structure is formed with a refractory metal layer, amorphous silicon layer and refractory metal layer sandwiched between two metal interconnection lines. Unprogrammed...http://www.google.es/patents/US5384481?utm_source=gb-gplus-sharePatente US5384481 - Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
Antifuse circuit structure for use in a field programmable gate array and ...
