In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations...http://www.google.es/patents/US4118630?utm_source=gb-gplus-sharePatente US4118630 - Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
Ion implantation apparatus with a cooled structure controlling the surface ...
