Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example,...http://www.google.es/patents/US7709828?utm_source=gb-gplus-sharePatente US7709828 - RF circuits including transistors having strained material layers
RF circuits including transistors having strained material layers
