An ITO layer and a first metal layer is patterned on a glass substrate. A first silicon nitride layer, a silicon layer and a second silicon nitride layer are formed on the substrate. A back-side exposure is introduced using the gate electrodes as a mask. The second silicon nitride layer that is not covered...http://www.google.es/patents/US5976902?utm_source=gb-gplus-sharePatente US5976902 - Method of fabricating a fully self-aligned TFT-LCD
Method of fabricating a fully self-aligned TFT-LCD
