The present invention is directed to a method of forming an FeRAM integrated circuit, which includes forming a sidewall diffusion barrier prior to etching the bottom electrode diffusion barrier layer. The sidewall diffusion barrier layer is then etched prior to the bottom electrode diffusion barrier...http://www.google.es/patents/US6713342?utm_source=gb-gplus-sharePatente US6713342 - FeRAM sidewall diffusion barrier etch
