A simplified fabrication procedure for making flash EEPROM memory cells is disclosed. The method comprises performing a double-diffuse (deep) junction implant after the shallow source/drain of the memory cell have been implanted and formed. A high energy double-diffuse implant is used to replace...http://www.google.es/patents/US5776811?utm_source=gb-gplus-sharePatente US5776811 - Simplified process for fabricating flash eeprom cells
Simplified process for fabricating flash eeprom cells
