The vertical DRAM capacitor with a buried LOCOS collar characterized by: a self-aligned bottle and gas phase doping; no consumption of silicon at the depth of the buried strap; no reduction of trench diameter; and a nitride layer to protect trench sidewalls during gas phase doping....http://www.google.es/patents/US6599798?utm_source=gb-gplus-sharePatente US6599798 - Method of preparing buried LOCOS collar in trench DRAMS
Method of preparing buried LOCOS collar in trench DRAMS
