A projection is formed in a substrate by anisotropic etching and a transistor is contained in the projection. The central portion of the projection covered with a gate electrode is formed as a channel region, and drain and source regions are formed on both sides of the projection by oblique ion implantation...http://www.google.es/patents/US5391506?utm_source=gb-gplus-sharePatente US5391506 - Manufacturing method for semiconductor devices with source/drain formed in substrate projection.
Manufacturing method for semiconductor devices with source/drain formed in ...
