A method of manufacturing a semiconductor device is disclosed wherein a WSiN layer is deposited in a contact hole as a barrier metal using an ALD process. A tungsten layer is deposited on the WSiN layer in the nucleation stage thereof. Then, using a CVD process, the contact hole is completely filled...http://www.google.es/patents/US7022601?utm_source=gb-gplus-sharePatente US7022601 - Method of manufacturing a semiconductor device
