A nonvolatile memory cell (500) has multiple oxide thicknesses, a tunnel oxide portion (625) and thicker gate oxide portion (630). The memory cell (500) may be used to form compact arrays of memory cells to store logical data. During programming of a selected memory cell, unselected memory cells are...http://www.google.es/patents/US6442073?utm_source=gb-gplus-sharePatente US6442073 - Nonvolatile memory cell with multiple gate oxide thicknesses
Nonvolatile memory cell with multiple gate oxide thicknesses
