A structure and method of maximizing the volume of low dielectric constant material between adjacent traces of a conductive interconnect structure. A semiconductor structure includes a semiconductor substrate, a first insulating layer located over the semiconductor substrate, a conductive interconnect...http://www.google.es/patents/US5854503?utm_source=gb-gplus-sharePatente US5854503 - Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit
Maximization of low dielectric constant material between interconnect traces ...
