A semiconductor device includes a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 .mu.m thick formed on the expanded surfaces of the porous silicon layer, wherein said...http://www.google.es/patents/US5644156?utm_source=gb-gplus-sharePatente US5644156 - Porous silicon photo-device capable of photoelectric conversion
Porous silicon photo-device capable of photoelectric conversion
