A method of manufacturing a capacitor for semiconductor memory devices is disclosed. According to the present invention, a lower electrode is formed on the semiconductor substrate. A Ta2O5 layer with a tantalum-based carbon-free precursor is formed on the lower electrode. And, an upper electrode is formed...http://www.google.es/patents/US6372667?utm_source=gb-gplus-sharePatente US6372667 - Method of manufacturing a capacitor for semiconductor memory devices
Method of manufacturing a capacitor for semiconductor memory devices
