There is provided a semiconductor device which comprises a capacitor including a lower electrode, a dielectric film, and an upper electrode, a first protection film formed on the capacitor, a first wiring formed on the first protection film, a first insulating film formed on the first wiring, a second...http://www.google.es/patents/US20020061620?utm_source=gb-gplus-sharePatente US20020061620 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
Número de solicitud: 09/819,738 Número de publicación: US 2002/0061620 A1 Fecha de presentación: 29 Mar 2001 Patente emitida: US6570203 ( Fecha de emisión 27 May 2003)
