Some embodiments of the invention include a memory cell having a vertical transistor and a trench capacitor. The trench capacitor includes a capacitor plate with a roughened surface for increased surface area. Other embodiments are described and claims. ...http://www.google.es/patents/US20060249777?utm_source=gb-gplus-sharePatente US20060249777 - Device, system, and method for a trench capacitor having micro-roughened semiconductor surfaces
Device, system, and method for a trench capacitor having micro-roughened ...
Número de solicitud: 11/484,541 Número de publicación: US 2006/0249777 A1 Fecha de presentación: 11 Jul 2006 Patente emitida: US7408216 ( Fecha de emisión 5 Ago 2008)
