A memory cell having an asymmetrical transistor which provides access to a data storage circuit of the memory cell. The asymmetrical transistor exhibits a forward threshold voltage when forward biased and a reverse threshold voltage when reverse biased. The forward threshold voltage is less...http://www.google.es/patents/US5790452?utm_source=gb-gplus-sharePatente US5790452 - Memory cell having asymmetrical source/drain pass transistors and method for operating same
Memory cell having asymmetrical source/drain pass transistors and method for ...
