Fabrication methods for gate transistors in integrated circuit devices enable the formation of recessed access device structures or FinFET structures having P-type workfunctions. The fabrication methods also provide for the formation of access transistor gates of an access device following formation...http://www.google.es/patents/US7858471?utm_source=gb-gplus-sharePatente US7858471 - Methods of fabricating an access transistor for an integrated circuit device, methods of fabricating periphery transistors and access transistors, and methods of fabricating an access device comprising access transistors in an access circuitry region and peripheral transistors in a peripheral circuitry region spaced from the access circuitry region
Methods of fabricating an access transistor for an integrated circuit device ...
