A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type...http://www.google.es/patents/US7964424?utm_source=gb-gplus-sharePatente US7964424 - Method for manufacturing nitride semiconductor light-emitting element
Method for manufacturing nitride semiconductor light-emitting element
