In a semiconductor integrated circuit device including a third gate, the present invention improves miniaturization and operation speed and reduces a defect density of an insulator film. In a semiconductor integrated circuit device including a well of a first conductivity type formed in a semiconductor...http://www.google.es/patents/US6901006?utm_source=gb-gplus-sharePatente US6901006 - Semiconductor integrated circuit device including first, second and third gates
Semiconductor integrated circuit device including first, second and third gates
