A broad area semiconductor laser device having an NFP with top hat shaped profiles for the P wave and the S wave, which result from polarized beam splitting of the emitted light, is provided. The broad area semiconductor laser device of the present invention has the same structure as the broad area semiconductor...http://www.google.es/patents/US20040047379?utm_source=gb-gplus-sharePatente US20040047379 - Semiconductor laser device
Número de solicitud: 10/446,184 Número de publicación: US 2004/0047379 A1 Fecha de presentación: 28 May 2003 Patente emitida: US7016386 ( Fecha de emisión 21 Mar 2006)
