The use of atomic layer deposition (ALD) to form a dielectric layer of zirconium nitride (Zr3N4) and zirconium oxide (ZrO2) and a method of fabricating such a dielectric layer produces a reliable structure for use in a variety of electronic devices. Forming the dielectric structure includes depositing...http://www.google.es/patents/US20060183272?utm_source=gb-gplus-sharePatente US20060183272 - Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
Número de solicitud: 11/058,563 Número de publicación: US 2006/0183272 A1 Fecha de presentación: 15 Feb 2005 Patente emitida: US7399666 ( Fecha de emisión 15 Jul 2008)
