In the course of forming the collar dielectric in a DRAM cell having a deep trench capacitor, a number of filling and stripping steps required in the prior art are eliminated by the use of a spin-on material that can withstand the high temperatures required in front-end processing and also provide satisfactory...http://www.google.es/patents/US6967137?utm_source=gb-gplus-sharePatente US6967137 - Forming collar structures in deep trench capacitors with thermally stable filler material
Forming collar structures in deep trench capacitors with thermally stable ...
