On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with...http://www.google.es/patents/US5955213?utm_source=gb-gplus-sharePatente US5955213 - Ferroelectric thin film, electric device, and method for preparing ferroelectric thin film
Ferroelectric thin film, electric device, and method for preparing ...
