The conventional capacitor-under-bitline (CUB) DRAM structure faces problems of high photoresist developing aspect ratio and step-height. The present invention discloses a DRAM with planar upper-plate structure and the upper-plate forms an opening broader than the bitline contacts at the top of the lower-plate...http://www.google.es/patents/US6413813?utm_source=gb-gplus-sharePatente US6413813 - Method for making DRAM using an oxide plug in the bitline contacts during fabrication
Method for making DRAM using an oxide plug in the bitline contacts during ...
