A capacitor structure for a memory element of an integrated circuit is provided. The capacitor is formed within a via hole defined through a first dielectric layer, and comprises a bottom electrode defined by an underlying conductive layer, and a capacitor dielectric filling the via with a dielectric...http://www.google.es/patents/US5452178?utm_source=gb-gplus-sharePatente US5452178 - Structure and method of making a capacitor for an intergrated circuit
Structure and method of making a capacitor for an intergrated circuit
