The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide....http://www.google.es/patents/US7183208?utm_source=gb-gplus-sharePatente US7183208 - Methods for treating pluralities of discrete semiconductor substrates
Methods for treating pluralities of discrete semiconductor substrates
