A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to form a pattern of trenches in a photoresist...http://www.google.es/patents/US20080265338?utm_source=gb-gplus-sharePatente US20080265338 - Semiconductor Device Having Multiple Fin Heights
Número de solicitud: 11/741,580 Número de publicación: US 2008/0265338 A1 Fecha de presentación: 27 Abr 2007 Patente emitida: US7560785 ( Fecha de emisión 14 Jul 2009)
