An error recovery technique is used on marginal nonvolatile memory cells. A marginal memory cell is unreadable because it has a voltage threshold (VT) of less than zero volts. By biasing adjacent memory cells, this will shift the voltage threshold of the marginal memory cells, so that it is a positive...http://www.google.es/patents/US7099194?utm_source=gb-gplus-sharePatente US7099194 - Error recovery for nonvolatile memory
