A method for forming a metal thin film is suitable for suppressing the deterioration of a throughput according to enlarging a purge time to prevent the metal precursor from mixing with a reaction gas in a reactor during the deposition of an atomic layer. The method includes the steps of flowing a reaction...http://www.google.es/patents/US20040053496?utm_source=gb-gplus-sharePatente US20040053496 - Method for forming metal films
Número de solicitud: 10/329,522 Número de publicación: US 2004/0053496 A1 Fecha de presentación: 27 Dic 2002 Patente emitida: US6803311 ( Fecha de emisión 12 Oct 2004)
