A method for forming a tantalum-based anti-reflective coating (ARC) layer begins by forming an MOS metallic gate electrode layer (20) over a substrate (20). The MOS metallic gate electrode layer (20) is covered with an ARC layer (22). The ARC layer is preferably tantalum pentoxide or a tantalum pentoxide...http://www.google.es/patents/US6294820?utm_source=gb-gplus-sharePatente US6294820 - Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer
Metallic oxide gate electrode stack having a metallic gate dielectric ...
