A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least...http://www.google.es/patents/US5661062?utm_source=gb-gplus-sharePatente US5661062 - Ultra high density, non-volatile ferromagnetic random access memory
Ultra high density, non-volatile ferromagnetic random access memory
