A process used during the formation of a semiconductor device comprises the steps of placing a plurality of semiconductor wafers each having a surface into a chamber of a batch wafer processor such as a diffusion furnace. The wafers are heated to a temperature of between about 300 C. and about 550 C....http://www.google.es/patents/US20010014521?utm_source=gb-gplus-sharePatente US20010014521 - Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
Batch processing for semiconductor wafers to form aluminum nitride and ...
Número de solicitud: 09/836,123 Número de publicación: US 2001/0014521 A1 Fecha de presentación: 16 Abr 2001 Patente emitida: US6365519 ( Fecha de emisión 2 Abr 2002)
