A first MOS transistor and a second MOS transistor are connected in series with a first complementary MOS transistor and a second complementary MOS transistor that are connected in parallel with one another. The transistors are each realized as a vertical layer sequence that forms the source, channel...http://www.google.es/patents/US5559353?utm_source=gb-gplus-sharePatente US5559353 - Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof
Integrated circuit structure having at least one CMOS-NAND gate and method ...
