The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal...http://www.google.es/patents/US5760475?utm_source=gb-gplus-sharePatente US5760475 - Refractory metal-titanium nitride conductive structures
