A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased...http://www.google.es/patents/US20020045361?utm_source=gb-gplus-sharePatente US20020045361 - Plasma processes for depositing low dielectric constant films
Plasma processes for depositing low dielectric constant films
Número de solicitud: 09/957,551 Número de publicación: US 2002/0045361 A1 Fecha de presentación: 19 Sep 2001 Patente emitida: US6660656 ( Fecha de emisión 9 Dic 2003)
