A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole...http://www.google.es/patents/US5834846?utm_source=gb-gplus-sharePatente US5834846 - Semiconductor device with contact structure and method of manufacturing the same
Semiconductor device with contact structure and method of manufacturing the ...
