Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon...http://www.google.es/patents/US6997985?utm_source=gb-gplus-sharePatente US6997985 - Semiconductor, semiconductor device, and method for fabricating the same
Semiconductor, semiconductor device, and method for fabricating the same
