A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface...http://www.google.es/patents/US7307019?utm_source=gb-gplus-sharePatente US7307019 - Method for supercritical carbon dioxide processing of fluoro-carbon films
Method for supercritical carbon dioxide processing of fluoro-carbon films
