Memory cells, formed as trench transistors, having a respective floating gate electrode and a control gate electrode at a trench wall above a channel region between doped regions for source and drain are provided with a gate electrode arranged in a further trench, via which gate electrode the channel...http://www.google.es/patents/US6979859?utm_source=gb-gplus-sharePatente US6979859 - Flash memory cell and fabrication method
