One aspect of this disclosure relates to a method for forming an integrated circuit. According to various embodiments of the method, a plurality of transistors is formed. For each transistor, a gate dielectric is formed on a substrate, a substitutable structure is formed on the gate dielectric, and source/drain...http://www.google.es/patents/US7674698?utm_source=gb-gplus-sharePatente US7674698 - Metal-substituted transistor gates
