There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a first gate electrode...http://www.google.es/patents/US7776712?utm_source=gb-gplus-sharePatente US7776712 - Method of forming a semiconductor device
