A gate dielectric (150) for a gate (160) is formed by thermal oxidation simultaneously with as a dielectric on a surface of another gate (140). The dielectric thickness on the other gate is controlled by the dopant concentration in the other gate. The gates may be gates of different MOS transistors,...http://www.google.es/patents/US6974739?utm_source=gb-gplus-sharePatente US6974739 - Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
Fabrication of dielectric on a gate surface to insulate the gate from ...
