A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate,...http://www.google.es/patents/US6225650?utm_source=gb-gplus-sharePatente US6225650 - GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
GAN group crystal base member having low dislocation density, use thereof ...
